Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/170231| Title: | Simulation of Radiation Effects in SiO2/Si Structures |
| Authors: | Komarov, A. F. Zayats, G. M. Komarov, F. F. Miskiewicz, S. A. Michailov, V. V. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2014 |
| Publisher: | Sumy State University |
| Citation: | Proceedings of the international conference nanomaterials: applications and properties. - 2014. - Vol. 3, No 1. - 01PISERE04(4pp) |
| Abstract: | We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-insulator-semiconductor structures due to irradiation with X-rays. The system of equations used as a basis of the simulation model is solved iteratively by efficient numerical method. The obtained simulation results correlate well with the respective data presented in other scientific publications |
| URI: | http://elib.bsu.by/handle/123456789/170231 |
| ISSN: | 2304-1862 |
| Appears in Collections: | Статьи сотрудников НИИ ПФП |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| NAP-Komarov-1532-3996-1-PB.pdf | 555,04 kB | Adobe PDF | View/Open |
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