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|Title:||Polycrystalline bismuth films: correlation between grain structure and electron transport|
|Authors:||Fedotov, A. S.|
Poznyak, S. K.
Tsybulskaya, L. S.
Shepelevich, V. G.
Svito, I. A.
Saad, A. M.
Mazanik, A. V.
Fedotov, A. K.
|Keywords:||ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика|
|Publisher:||WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim|
|Citation:||Physica Status Solidi B. - 2015. - Vol. 252, Issue 9. - P. 2000 - 2005|
|Abstract:||Grain structure and the temperature dependences of resistivity, magnetoresistance, Hall and Seebeck coefficients measured in the range from 4 to 300 K were investigated for polycrystalline bismuth films obtained by the melt spinning (MS) and electrochemical deposition (ECD) methods. Charge-carrier concentration and mobilities were calculated assuming the carrier scattering on acoustic deformation potential as the dominant scattering mechanism, parabolicity of holes dispersion law, implying the Lax model for L-band electrons and neglecting the influence of L-band holes on conductivity. The experimental results and calculations have demonstrated that the electrical properties of the Bi films studied are strongly affected by the grain-boundary density.|
|Appears in Collections:||Кафедра энергофизики|
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