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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/119960
Title: Polycrystalline bismuth films: correlation between grain structure and electron transport
Authors: Fedotov, A. S.
Poznyak, S. K.
Tsybulskaya, L. S.
Shepelevich, V. G.
Svito, I. A.
Saad, A. M.
Mazanik, A. V.
Fedotov, A. K.
Issue Date: May-2015
Publisher: WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Citation: Physica Status Solidi B. - 2015. - Vol. 252, Issue 9. - P. 2000 - 2005
Abstract: Grain structure and the temperature dependences of resistivity, magnetoresistance, Hall and Seebeck coefficients measured in the range from 4 to 300 K were investigated for polycrystalline bismuth films obtained by the melt spinning (MS) and electrochemical deposition (ECD) methods. Charge-carrier concentration and mobilities were calculated assuming the carrier scattering on acoustic deformation potential as the dominant scattering mechanism, parabolicity of holes dispersion law, implying the Lax model for L-band electrons and neglecting the influence of L-band holes on conductivity. The experimental results and calculations have demonstrated that the electrical properties of the Bi films studied are strongly affected by the grain-boundary density.
URI: http://elib.bsu.by/handle/123456789/119960
Appears in Collections:Кафедра энергофизики

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