Некоторые особенности атомной структуры монокристаллов кремния

Abstract

A number of new structural defects in a volume and on surfaces of Si-monocrystals were detected and studied by different experimental methods. In particular, new deep-level defects incorporating impurity atoms were first discovered which produce luminescent spectral bands with characteristic sharp zero-phonon lines. Such luminescent spectra have provided a way to develop new methods of impurity concentration measuring in Si-monocrystals. The phenomenon of the reversible reconstruction of the surface cluster atomic structures resulting from the electric field influence was observed on Si-surfaces. The main structural and electronic features of the clusters wer e determined by tunneling microscopy and spectroscopy. It is suggested to consider such clusters as promising memory cells for high-density probe-based data storage devices.