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https://elib.bsu.by/handle/123456789/211330| Title: | Омические контакты к кристаллам алмаза типа IIb на основе трехслойной металлизации Ti/TiN/Au |
| Authors: | Соловьев, Валерий Сергеевич Гусаков, Григорий Анатольевич Крекотень, Олег Владимирович |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2003 |
| Publisher: | Минск : БГУ |
| Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2003. - № 3. – С. 24-30. |
| Abstract: | The Ti/TiN/Au threelayer metallization scheme has been investigated as a contact metallization to semiconducting diamond. The optimum treatment regimes for which the current-voltage curves of Ti/TiN/Au contacts become linear and nitrogen does not diffuse into the carbide layer and adjacent region of diamond have been determined. Using this contact metallization system, Hall mobility, charge carriers concentration and the temperature dependences of resistivity in IIb type synthetic diamond have been measured. |
| URI: | http://elib.bsu.by/handle/123456789/211330 |
| ISSN: | 0321-0367 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 2003, №3 (сентябрь) |
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