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|Title:||The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene|
|Authors:||Kolesov, E. A.|
Tivanov, M. S.
Korolik, O. V.
Kapitanova, O. O.
Hak Dong Cho
Tae Won Kang
Panin, G. N.
|Keywords:||ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика|
|Citation:||Beilstein Journal of Nanotechnology. – 2018. – Volume 9 – Pages 704-710.|
|Abstract:||Atmospheric doping of supported graphene was investigated by Raman scattering under different pressures. Various Raman spectra parameters were found to depend on the pressure and the substrate material. The results are interpreted in terms of atmospheric adsorption leading to a change in graphene charge carrier density and the effect of the substrate on the electronic and phonon properties of graphene. It was found that adsorption of molecules from the atmosphere onto graphene doped with nitrogen (electron doping) compensates for the electron charge. Furthermore, the atmosphere-induced doping drastically decreases the spatial heterogeneity of charge carriers in graphene doped with nitrogen, while the opposite effect was observed for undoped samples. The results of this study should be taken into account for the development of sensors and nanoelectronic devices based on graphene.|
|Appears in Collections:||Кафедра энергофизики|
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