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Please use this identifier to cite or link to this item: http://elib.bsu.by/handle/123456789/191599
Title: The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene
Authors: Kolesov, E. A.
Tivanov, M. S.
Korolik, O. V.
Kapitanova, O. O.
Xiao Fu
Hak Dong Cho
Tae Won Kang
Panin, G. N.
Issue Date: Feb-2018
Publisher: Beilstein-Institut
Citation: Beilstein Journal of Nanotechnology. – 2018. – Volume 9 – Pages 704-710.
Abstract: Atmospheric doping of supported graphene was investigated by Raman scattering under different pressures. Various Raman spectra parameters were found to depend on the pressure and the substrate material. The results are interpreted in terms of atmospheric adsorption leading to a change in graphene charge carrier density and the effect of the substrate on the electronic and phonon properties of graphene. It was found that adsorption of molecules from the atmosphere onto graphene doped with nitrogen (electron doping) compensates for the electron charge. Furthermore, the atmosphere-induced doping drastically decreases the spatial heterogeneity of charge carriers in graphene doped with nitrogen, while the opposite effect was observed for undoped samples. The results of this study should be taken into account for the development of sensors and nanoelectronic devices based on graphene.
URI: http://elib.bsu.by/handle/123456789/191599
ISSN: 2190-4286
Appears in Collections:Кафедра энергофизики

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