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dc.contributor.authorSeliuta, D.-
dc.contributor.authorSubačius, L.-
dc.contributor.authorKašalynas, I.-
dc.contributor.authorShuba, M.-
dc.contributor.authorPaddubskaya, A.-
dc.date.accessioned2014-06-24T14:16:53Z-
dc.date.available2014-06-24T14:16:53Z-
dc.date.issued2014-06-24-
dc.identifier.otherdoi: 10.1063/1.4804658-
dc.identifier.urihttp://elib.bsu.by/handle/123456789/98577-
dc.descriptionCitation: J. Appl. Phys. 113, 183719 (2013); doi: 10.1063/1.4804658ru
dc.description.abstract(Received 6 March 2013; accepted 26 April 2013; published online 14 May 2013) Carrier transport features in single-wall carbon nanotube (SWCNT) films under strong electric fields (up to 105 V/cm) are presented. Application of electrical pulses of nanosecond duration allowed to minimize Joule heating and resolve intrinsic nonlinearities with the electric field. Investigations within a wide range of temperatures—4.2–300 K—indicated that carrier localization as well as tunneling through the insulating barriers between conducting regions takes place in SWCNT films. Crossover from semiconducting behavior to metallic behavior in strong electric field is described using the fluctuation induced tunneling model and assuming that the conducting regions demonstrate characteristic metallic conductivity. V C 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4804658]ru
dc.language.isoenru
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физикаru
dc.titleElectrical conductivity of single-wall carbon nanotube films in strong electric fieldru
dc.typeArticleru
Appears in Collections:Статьи НИУ «Институт ядерных проблем»

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