Asymmetric multiple-quantum-well heterostructure laser systems: conception, performance, and characteristics

Abstract

A new type of laser diodes and amplifiers based on asymmetric quantum-well heterostructures having active layers of different thickness and/or compositions has been considered. Bistable switching and regimes of regular radiation pulsation at two or three remote wavelengths in the range of 790 to 850 nm in the GaAs-AlGaAs bi- and triple-quantum-well heterostructures are described. Influence of non-linear processes including gain suppression due to carrier heating on lasing regimes has been examined. Transformation of gain bands for TE and TM modes in dependence on the pump current has been studied for asymmetric four-quantum-well structures. The interval of tuning amplification wavelengths in the system reaches up to 70 nm. Keywords: quantum-well laser diodes, non-linear effects, bistability, regular pulsation, gain spectra.