The effect of fast particles’ irradiation on electrooptical properties of GaP LEDs

Abstract

The electrooptical properties of industrial AL 102 GaP light-emitting diodes (LEDs) irradiated with fast particles have been studied. 2MeV electrons and fast reactor neutrons were used and devices’ microplsma emitting, current-voltage and capacitance-voltage characteristics were measured. It was shown that electron irradiation in the range (2-5)1016 cm-2 leads to the drop of microplasma emitting intensity, decrease of capacity and reverse currents and increase of reverse bias. The annealing study of current-voltage characteristics after neutron irradiation of diodes confirms the assumption about prevailing radiation influence on diode base due to induce of deep levels.