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dc.contributor.authorPavlovskii, V. N.-
dc.contributor.authorLutsenko, E. V.-
dc.contributor.authorZubialevich, V. Z.-
dc.contributor.authorMarko, I. P.-
dc.contributor.authorYablonskii, G. P.-
dc.contributor.authorHeuken, M.-
dc.contributor.authorSchineller, B.-
dc.contributor.authorHeime, K.-
dc.date.accessioned2013-02-06T10:52:38Z-
dc.date.available2013-02-06T10:52:38Z-
dc.date.issued2000-
dc.identifier.citationКвантовая электроникаru
dc.identifier.urihttp://elib.bsu.by/handle/123456789/31893-
dc.language.isoenru
dc.publisherБГУru
dc.subjectЭБ БГУ::ТЕХНИЧЕСКИЕ И ПРИКЛАДНЫЕ НАУКИ. ОТРАСЛИ ЭКОНОМИКИ::Электроника. Радиотехникаru
dc.titleFAR-field Pattern of InGaN/GaN Heterostructure Lasersru
Appears in Collections:2000. Квантовая электроника

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