Effect of Pulsed Laser Annealing on Optical Properties of Silicon Implanted with Selenium and Manganese

Abstract

Different fluences of Mn+ and Se+ ions were implanted in silicon, followed by pulsed laser annealing. Studies carried out by RBS and Raman spectroscopy analysis show a significant redistribution of impurities in depth and to the Si surface. In the case of Mn+ implantation, during the cooling stage of the Si melted state, the most of Se impurity atoms move to the near-surface region. The laser annealing of Se+ implanted up to 10 16 ions/cm2 results in in-depth redistribution. After annealing, the IR absorption of Se implanted and laser annealed sample sharply increased by 50 times. The measured Raman spectra indicate on different levels of the modified Si-crystallinity perfection depending on impurity type and concentration