Study of temperature coefficient of resistance of n-InSb films on i-GaAs (100) substrate and produce temperature sensor of them

Abstract

In present work, the explosive thermal evaporation was used to form n-InSb films on i-GaAs (100) substrates. The investigation results of crystal state, microstructure, phase and elemental composition, electrical properties of n-InSb films deposited at the substrate temperature of 420−480 °C are presented. It is shown that heteroepitaxial n-InSb films form in the deposition temperature of 420 °C. At a substrate temperature of 430–440 °C, the surface is inhomogeneous; precipitates oriented differently in the substrate plane are clearly observed. At a substrate temperature of 480 °C, the phase composition of the film is a superpositionof n-InSb and Inphases, and the SEM image of the sample shows that the sample is a i-GaAs substrate with InSb formations distributed over the surface. The resulting n-InSb films at a deposition temperature of 430°C have the best temperature coefficient of resistance (−1.25±0.02) %·deg-1.Temperature sensor based on n-InSb-i-GaAs show performance in a wide temperature range (–80…+150 °C) and at liquid nitrogen temperature and can be used in the space industry and low-temperature electronics, as well as in the automotive and aircraft industries.