Photoluminescence of the GaAs Superlattices with Quasi-Delta-Doped Layers

Abstract

Doping superlattices, or n-i-p-i crystals, have advanced properties for the development of novel optoelectronic devices. The 6-doping technology extends possibilities of the superlattice design and allows improving the characteristics compared with homogeneously doped n-i-pi structures. For the 6-doping, molecular-beam epitaxy is most widely applied [l]. The GaAs 6-doped superlattices were also grown by metal-organic vapor-phase epitaxy [2, 31. For n- and p-type &doping, Si and C were used and tunable low-temperature photoluminescence (PL) was demonstrated. In this work, the GaAs short-period superlattices have been grown for the first time by the metal-organic hydride epitaxy method using Se and C for quasi-&-doping. Earlier, such a method was applied for making the photosensitive heterostructures with the GaInAs quantum-well spacer [4].