Structure and hardness evolution of silicon carbide epitaxial layers irradiated with He+ ions

Abstract

In our study, the 4H polytype SiC epitaxial layers of ∼ 3 µm thickness on SiC substrates were implanted with 500 keV He+ ions fluences in the range from 5×1014 ion/cm2 to 1×1017 ion/cm2. The induced defect distributions were studied by means of the Rutherford Backscattering technique in the channeling regime (RBS/C). Structure changes were identified via characteristic phonons intensity deviations registered by the Raman Spectroscopy technique. Evolution of hardness for all irradiated samples was investigated by means of conventional Vickers measurements and dynamic nanoindentation with the Oliver–Pharr method of results processing. For all samples, the normal indentation size effect was observed.