Magnetotransport in SihSbi delta-layer after swift heavy ion-induced modification

Abstract

In the present paper the investigations of the influence of swift heavy ion irradiation on the magnetotransport in the antimony (Sb) δin silicon are reported. Temperature and magnetic field dependences of the resistance R(T;B) and the Hall coefficient RH(T;B) in the temperature range of 2 K < T < 300 K and B ≤ 8 T before and after the 167 MeV Xe+26 ion irradiation (ion fluence of 108 cm-2) were measured. At the temperatures below 50 K there is observed the transition from the Arrhenius log R(1/T ) to a logarithmic R ≈-log(T) dependence both before and after the swift heavy ion exposure which confirms the assumption that the carrier transport goes through the δ-layer mainly. Moreover, the transition from the positive to negative magnetoresistance was observed with the temperature decrease that is characteristic of the two-dimensional quantum corrections to the conductivity in the case of weak localization regime. The appropriate Thouless lengths LTh(T) δ A δ Tp (where p and A are dependent on the scattering mechanism) indicated their ≈ 25 - 30% decrease after the swift heavy ion exposure. It was shown that the exponent p values were close to the theoretical one of p = 1, confirming the realization of 2D weak localization regime in the carrier transport.