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https://elib.bsu.by/handle/123456789/247126Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ильяшук, Ю. М. | - |
| dc.contributor.author | Федотов, А. К. | - |
| dc.date.accessioned | 2020-08-03T10:09:50Z | - |
| dc.date.available | 2020-08-03T10:09:50Z | - |
| dc.date.issued | 1994 | - |
| dc.identifier.citation | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Механика. – 1994. – № 3. – С. 17-21. | ru |
| dc.identifier.issn | 0321-0367 | - |
| dc.identifier.uri | https://elib.bsu.by/handle/123456789/247126 | - |
| dc.description.abstract | In this work the influence of oxygen and carbon segregation on the voltage-current (I - V) characteristics measured across the plane of the individual grain boundaries, spontaneously nucleated during the growth (SNGBs) of shaped Silicon is studied. The investigations carried out have shown that such SNGBs display the slow temporal relaxation of I - V which can be described by a logarithmic law with the gigantic values of the characteristic times (-10 3- 10 4 sec) for a relaxation process | ru |
| dc.language.iso | ru | ru |
| dc.publisher | Минск : Універсітэцкае | ru |
| dc.rights | info:eu-repo/semantics/openAccess | en |
| dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика | ru |
| dc.title | Релаксация заряда на электрически активных границах зерен в профилированном кремнии | ru |
| dc.type | article | ru |
| dc.rights.license | CC BY 4.0 | ru |
| Appears in Collections: | 1994, №3 (сентябрь) | |
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