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Полная запись метаданных
Поле DC | Значение | Язык |
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dc.contributor.author | Kovalchuk, N. G. | - |
dc.contributor.author | Niherysh, K. A. | - |
dc.contributor.author | Felsharuk, A. V. | - |
dc.contributor.author | Svito, I. A. | - |
dc.contributor.author | Tamulevičius, T. | - |
dc.contributor.author | Tamulevičius, S. | - |
dc.contributor.author | Kargin, N. I. | - |
dc.contributor.author | Komissarov, I. V. | - |
dc.contributor.author | Prischepa, S. L. | - |
dc.date.accessioned | 2019-12-19T07:52:02Z | - |
dc.date.available | 2019-12-19T07:52:02Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | Journal of Physics D Applied Physics. – 2019. – Vol. 52(30), – P. 30LT01. DOI: 10.1088/1361-6463/ab1c4b | ru |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | http://elib.bsu.by/handle/123456789/236329 | - |
dc.description.abstract | Chemical vapor deposited nitrogen-doped graphene, transferred on SiO2/Si substrate was selectively patterned by femtosecond laser ablation for formation of the topology dedicated for charge carrier measurements. Ultrashort 1030 nm wavelength Yb:KGW fs-laser pulses of 22 μJ energy,14 mJ/cm2 fluence, 96% pulse overlap and scanning speed of 100 mm/s were found to be optimum regime for the high throughput microstructure ablation in graphene, without surface damage of the substrate in the employed fs-laser micromachining workstation. Optical scanning electron, atomic force microscopy as well as Raman spectroscopy were applied to clarify the intensive fs-laser light irradiation effects on graphene and substrate as well as to verify the quality of the graphene removal. Measurements of magnetotransport properties of the fs-laser ablated nitrogen-doped graphene microstructure in the Hall configuration enabled determination of the type as well as concentration of charge carriers in a wide temperature range. | ru |
dc.language.iso | en | ru |
dc.publisher | Institute of Physics IOP Publishing | ru |
dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика | ru |
dc.title | Direct patterning of nitrogen-doped CVD graphene based microstructures for charge carrier measurements employing femtosecond laser ablation | ru |
dc.type | article | ru |
dc.rights.license | CC BY 4.0 | ru |
Располагается в коллекциях: | Кафедра физики твердого тела и нанотехнологий (статьи) |
Полный текст документа:
Файл | Описание | Размер | Формат | |
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Direct patterning of nitrogen-doped CVD graphene based microstructures for charge carrier measurements employing femtosecond laser ablation.pdf | 1,11 MB | Adobe PDF | Открыть |
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