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dc.contributor.authorКазакевич, Л. А.-
dc.contributor.authorЛугаков, П. Ф.-
dc.date.accessioned2019-08-07T10:55:17Z-
dc.date.available2019-08-07T10:55:17Z-
dc.date.issued1999-
dc.identifier.citationВестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 1999. – № 1. – С. 19-22.ru
dc.identifier.issn0321-0367-
dc.identifier.urihttp://elib.bsu.by/handle/123456789/226520-
dc.description.abstractThe effect of impurity magnesium on the accumulation processes of compensating radiation defects in epitaxial Si layers was studied. Increase of the A- and E-centres production rates during additional doping of epitaxial layers by magnesium was discovered. The results obtained are explained taking into account compensation by magnesium atoms of the surface-induced elastic stress fields.ru
dc.language.isoruru
dc.publisherМинск : Універсітэцкаеru
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физикаru
dc.titleВлияние деформационных напряжений, создаваемых атомами магния, на образование радиационных дефектов в кремнииru
dc.typearticleru
Appears in Collections:1999, №1 (январь)

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