Изменение электрических характеристик полиэтилена имплантацией и диффузией

Abstract

The sheet resistivity of polyethylene implanted with F+, As+, Sb+ ions to different doses and then exposed to iodine vapours was studied. The iodine doping leads to an immediate decrease of the sheet resistivity of the radiation damaged polyethylene by about three orders of magnitude. A spontaneous increase of the sheet resistivity as a function of time elapsed from the diffusion was observed along with iodine inward migration. The data obtained seem to support a concept of enhanced mobility of iodine atoms in the radiation damaged surface layer and their trapping on the defects produced by the implanted ions impact.