Исследование структуры арсенида галлия, облученного ионами аргона и фосфора в самоотжиговых режимах

Abstract

The structure transformations in GaAs irradiated with Ar+ and P+ ions at the ion beam currents 3 and IµA/cm2 respectively in the fluence interval (0,6-6) * 1015Cm-2 have been investigated using Transmission electron microscopy and Rutherford backscattering and channeling. It has been found that ion-beam-induced crystallization (IBIC) in the GaAs layer amorphyzed at the earlier irradiation stages takes place at dose 3 * 1015cm-2. In spite of the lesser heat of a sample the restoration degree of the GaAs crystalline lattice is essentially larger at the implantation of the isovalent phosphorus than at the implantation of inert argon. The observed effect has been explained by the difference of IBIC mechanisms.