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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/208387
Title: Корреляционный анализ в теории неаддитивных методов косвенной дозиметрии ионной имплантации
Other Titles: The correlation analysis in the theory of non additive methods of dosimetry of ion implantation / V.I. Kiselev, A.S. Shulenkov
Authors: Киселев, В. И.
Шуленков, А. С.
Issue Date: 2003
Publisher: Минск : БГУ
Citation: Взаимодействие излучений с твердым телом: материалы V междунар. науч. конф., 6-9 окт. 2003 г., Минск. — Мн.: БГУ, 2003. — С. 362-364.
Abstract: На основе корреляционного метода предложены общие принципы оценки случайной погрешности измерения макроскопических параметров, изменяющихся в результате ионной имплантации дозами менее 1-1012см-2. Показана корреляционная природа переменных, которые описывают особенности поведения неаддитивных калибровочных кривых Нарушение аддитивности реакции системы на слабое радиационное возмущение является следствием нелинейности соответствующего коэффициента корреляции. Результаты полуэмпирической аппроксимации дозовых зависимостей метода двойной имплантации согласуются с экспериментом.
Abstract (in another language): Efficiency of methods of ionic - beam processing in VLSI technology depends on accuracy of maintenance required quantity and uniformity of an implanted doze. Therefore studying of systems with not additive change of properties (which is generalized are characterized by parameter of a doze) at weak radiating damage by ion dozes less then 1-1012см-2 is interest first of all from the point of view of an opportunity of their subsequent use as test structures of indirect dosimetry of ion implantation. In this work correlation factors, which result in occurrence additional (over background) casual error of measurement of doze parameter and a way of an estimation of this error are studied. The application of the correlation approach to the theoretical analysis of measuring curve not additive ways of definition of a low doze of the introduced ions is considered also. Additive accumulation is usually observed for dozes less MO12 cm '2 In this case the defects created by separate ions along tracks, poorly influence against each other. Deviations from a principle of additivity are caused by internal interactions of the various nature. They result in occurrence of additional multipliers in analytical representation of the functions describing effects of a doze at a macroscopical level. Methods of which presence of conditions with the additive response to ion influence is typical are considered. For such methods corresponding multipliers have structure of Gibbons formula, which is used for the description of dynamics of growth of an amorphous phase in the implanted crystal semiconductor. Intermediate conditions form a continuous row (not additive transition) to which the correlation parameter of concrete irradiated system is put in conformity. Spatial factor of correlation between structures of concentration distribution and radiating defects is this parameter for test structures of double implantation method. The factor of correlation is formally similar to temporary correlation functions of the theory of stochastic processes. Transition between the basic conditions through additive is possible only in case of rectangular contours with linear correlation parameter. Therefore nonlinearity of correlation factor is interpreted as a relative degree of non additivity with a maximum in a point of equality to zero of its second derivative.
URI: http://elib.bsu.by/handle/123456789/208387
ISBN: 985-445-236-0; 985-445-235-2
Appears in Collections:2003. Взаимодействие излучений с твердым телом

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