Pulse irradiated by laser and electron beam porous silicon/silicon structure

Abstract

The processes of heat transfer in the pulse irradiated inhomogeneous semiconductor crystal on basis structure porous silicon/silicon was studied. The implicit numerical method was applied for investigation of heating and cooling processes in the crystal. The temperature profiles under pulse laser and electron irradiation were compared. We were also showed that the temperature gradient changed the sign crystal's heating and cooling under electron beam operation. In case of laser beam the change of sign did not observe.