Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/204599Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Хижняк, Екатерина Александровна | - |
| dc.contributor.author | Юхневич, Анатолий Викторович | - |
| dc.date.accessioned | 2018-08-29T09:07:31Z | - |
| dc.date.available | 2018-08-29T09:07:31Z | - |
| dc.date.issued | 2004 | - |
| dc.identifier.citation | Вестник Белорусского государственного университета. Сер. 2, Химия. Биология. География. – 2004. - № 2. – С. 22-24. | ru |
| dc.identifier.issn | 0372-5340 | - |
| dc.identifier.uri | http://elib.bsu.by/handle/123456789/204599 | - |
| dc.description.abstract | In this report the influence of concentration and temperature of KOH solutions on etching rate of Si-monocrystals is investigated. Activation energy and also the type of Si-microplanes self-formed in the course of etching near right angles of oxide masks, the sides of which are oriented in various crystallographic directions on Si (100) surface were determined. Analogous datas were obtained for KOH solutions with isopropanol (IPA) addition. | ru |
| dc.language.iso | ru | ru |
| dc.publisher | Минск : БГУ | ru |
| dc.rights | info:eu-repo/semantics/openAccess | en |
| dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Химия | ru |
| dc.title | Самоформирование микрорельефа поверхности монокристаллического кремния при анизотропном травлении | ru |
| dc.type | article | ru |
| Appears in Collections: | 2004, №2 (июнь) | |
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