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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/203918
Title: Diffusion of hydrogen from plasma source by grain boundaries in EFG silicon
Authors: Fedotov, A.
Mazanik, A.
Anis M.H. Saad
UIyashin, A.
Issue Date: 2001
Publisher: Минск : БГУ
Citation: Взаимодействие излучений с твердым телом: материалы IV Междунар. науч. конф., 3-5 окт. 2001 г., Минск. — Мн.: БГУ, 2001. — С. 99-101
Abstract: Diffusion of atomized hydrogen along grain boundaries (GBs) studied by transformation of their electrical activity in p-type silicon bicrystalline samples cut from EFG silicon crystals was investigated. The changes in electrical activity of GBs was estimated relative to both minority (MiC) and majority (MaC) carriers and demonstrated the correlation between the type, structure and thermal pre-history of GBs. It was shown on the base of this study that diffusion along GBs depends essentially on three factors: type of GBs, state of ribbons (as-grown or annealed) and concurrence of grain boundary dangling bonds and boron passivation effects. The model of the longitudinal hydrogen diffusion that explains these results is proposed.
URI: http://elib.bsu.by/handle/123456789/203918
ISBN: 985-445-236-0
Appears in Collections:2001. Взаимодействие излучений с твердым телом

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