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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/203830
Title: Влияние плазменной обработки ионами ртути и аргона на процессы переноса зарядов в пористом кремнии
Other Titles: The influence of plasmon processing by mercury and argon ions on the charge transfering in porous silicon / L.S.Monastyrskii, I.B.Olenych, M.R.Panasiuk
Authors: Монастырский, Л. С.
Оленин, И. Б.
Панасюк, М. Р.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2001
Publisher: Минск : БГУ
Citation: Взаимодействие излучений с твердым телом: материалы IV Междунар. науч. конф., 3-5 окт. 2001 г., Минск. — Мн.: БГУ, 2001. — С. 44-46
Abstract: Исследовано особенности переноса зарядов в пористом кремнии (ПК) имплантированном ионами ртути и аргона методами вольт-амперных характеристик (ВАХ), термостимулированной деполяризации (ТСД) и проводимости (ТСП). Изучены релаксационные процессы нестационарной фотопроводимости и оценено время жизни носителей заряда в ПК. Полученные экспериментальные результаты свидетельствуют о наличии в пористом кремнии локально заряженных областей, которые находятся в сильных электрических полях.
Abstract (in another language): Peculiarities of charge transferring in porous silicon (porSi) implanted by mercury and argon ions were investigated by current-voltage characteristic method, by thermostimulated depolarization (TSD) and conductivity techniques. PorSi implantation by mercury ions were carried out under accelerated high-frequency tension 1800 V. The density of ion current was 80 цАУст^. Implantation by argon ions were carried out under tension 1000 V and current density 70 mA/cm^. We were studied current flow as a tension function and relaxation themiostimulated processes at the perpendicular direction to the porSi – silicon substrate heterostructure interface. Current-voltage characteristics at the room temperatures had the straighten look. At the liquid nitrogen temperature the look of current-voltage characteristics changed to the hyperbological. For themiostimulated depolarization studying the samples were previously polarized at the tensions of 24, 8 and 1.5 V at the room temperatures and were cooled at the presence of the electrical field down to the liquid nitrogen temperature. TSD current of implanted by mercury ions structure was reached up of the significant values l>10'' A and did not depend on temperature in the range 80-220 K. TSD spectra of samples implanted by argon ions were possessed the low-temperature maximum at the 120 К and sharp peak at the 275 K. We were fixed that samples possess photosensitivity with the maximum at the 950 nm for heterostructure implanted by mercury ions and at the 1000 nm for heterostructures implanted by argon ions. At the low temperatures we were investigated the relaxational processes of non-stationar photoconductivity. Heterostructures implanted by mercury ions had in the few orders higher conductivity then conventional samples.
URI: http://elib.bsu.by/handle/123456789/203830
ISBN: 985-445-236-0
Appears in Collections:2001. Взаимодействие излучений с твердым телом

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