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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/203760
Title: Влияние имплантации немагнитных ионов на магнитотранспортные свойства тонких пленок пермаллоя
Other Titles: The influence of nonmagnetic ions implantation on magnetotransport properties of thin iron-nickel films / A. A. Mazanik, D. A. Skripka, M. G. Lukashevich
Authors: Мазаник, А. А.
Скрипка, Д. А.
Лукашевич, М. Г.
Issue Date: 2001
Publisher: Минск : БГУ
Citation: Взаимодействие излучений с твердым телом: материалы IV Междунар. науч. конф., 3-5 окт. 2001 г., Минск. — Мн.: БГУ, 2001. — С. 37-38.
Abstract: Изучено влияние имплантации немагнитных ионов бора и сурьмы на магнитотранспортные характеристики тонких пленок пермаллоя. Показано, что изменение характера магнитополевой зависимости магниторезистивного эффекта и его величины в тонких пленках пермаллоя под действием имплантации немагнитных ионов может быть интерпретировано изменением двух механизмов магнитосопротивления: а именно обусловленного изменением намагниченности и механизмов рассеяния носителей заряда.
Abstract (in another language): The influence of nonmagnetic ions implantation on magnetoresistance (MR) of thin magnetic iron-nickel films has been investigated. Thin iron-nickel films with the thickness ranged between 80 and 220 nm were deposited by means of ion-beam sputtering Nieo Fezo on insulating substrates is an external magnetic field 0,01 T. The films were implanted with boron and antimonium ions in dose range 6x10^ - 6x10'® ions/cm^ at energy lOOkeV. Transverse MR has been measured in the magnetic field up to 1,5 T at T=300 К when the field has been applied in the plane of the sample and perpendicular to the film for both directions of the electric current relatively to the film magnetization. Two positive and one negative component of MR are identified on MR curves. For both the magnetic field-sample plane orientations the MR positive components decreases with the implantation dose increase. It should be noted that the sharp peak of MR decreases smoothly with dose increasing while the next positive component disappears at the smallest dose 6x10" ion/cm^. At this dose the negative component of MR which can be recognized as an anisotropic MR becomes 3-4 times larger having the same magnetic field dependence. Further irradiation dose increase leads to the negative component of the anisotropic MR decrease and at the dose 6 x 1 i o n / cm^ it becomes smaller than in the virgin sample. The magnetic films MR value changing under the action of nonmagnetic ions implantation reflects the processes of domain and magnetic structure transformation at damage of the films during the ion implantation. This can be described by a superposition of two MR mechanisms appearing due to the magnetization and carriers scattering changing.
URI: http://elib.bsu.by/handle/123456789/203760
ISBN: 985-445-236-0
Appears in Collections:2001. Взаимодействие излучений с твердым телом

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