Influence of Substrate Material on the Microstructure of Cu2ZnSnS4 Thin Films

Abstract

Abstract: Cu2ZnSnS4 (CZTS) thin films were synthesized from subsequently electrochemically deposited Cu/Sn/Zn metal precursors on Mo, Ti and Ta foil substrates by sulfurization at 450 °C for 1 h. Polycrystalline CZTS films with the kesterite structure were formed on each substrate. The lattice parameters of CZTS in films are a = 5.414 ± 0.003 Å, c = 10.85 ± 0.02 Å for Mo substrate, a = 5.415 ± 0.001 Å, c = 10.78 ± 0.01 Å for Ti substrate and a = 5.420 ± 0.003 Å, c = 10.84 ± 0.01 Å for Ta substrate. The CZTS have an average grain sizes of about 53, 80 and 68 nm for Mo, Ti and Ta substrate respectively. The films showed two types of crystallites corresponding to CZTS and CuS phases. The films exhibit Cu-enrichment and the presence of CuS and ZnS secondary phases. Binary sulfides MoS2 and TaS2 were found in the films deposited on Mo and Ta substrates respectively.