Роль скорости ионов при формировании треков в сплавах Sio0,5Ge0,5

Abstract

We report the observation of a strong velocity effect in the single-crystalline Si0i5Ge0i5 alloy layers. Transmission electron microscopy reveals tracks of different morphology when U+ projectiles of energy between 0,8 and 2,64 GeV penetrate into the matrix with the same electronic stopping power Se but different velocity. The structure of the tracks changes from separated dots of low density to discontinuous tracks when the energy of U+ projectiles decreases from 2,64 to 0,8 GeV. The crystalline morphology of the tracks is confirmed. The formation of dislocation loops along the ion path is found in the case of slow ions. The results are deduced in the frame of the thermal-spike approach.