Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/195308Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Веселова, Татьяна Михайловна | - |
| dc.contributor.author | Поклонский, Николай Александрович | - |
| dc.contributor.author | Самуйлов, Владимир Александрович | - |
| dc.date.accessioned | 2018-05-17T11:22:13Z | - |
| dc.date.available | 2018-05-17T11:22:13Z | - |
| dc.date.issued | 2004 | - |
| dc.identifier.citation | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2004. - № 1. – С. 34-39. | ru |
| dc.identifier.issn | 0321-0367 | - |
| dc.identifier.uri | http://elib.bsu.by/handle/123456789/195308 | - |
| dc.description.abstract | A model of low frequency current oscillations in semi-insulating crystalline semiconductors with deep levels has been developed. A combination of the approaches of field-enhanced trapping, field-enhanced emission and negative differential mobility of carriers was used. A linear analysis of the model was done. The dispersion relations of the model were found to describe the experimentally observed dependences of the activation energies and of the fundamental frequency on the electric field and the temperature. | ru |
| dc.language.iso | ru | ru |
| dc.publisher | Минск : БГУ | ru |
| dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика | ru |
| dc.title | Модель низкочастотных токовых осцилляций в нолуизолирующих кристаллических полупроводниках | ru |
| dc.type | article | ru |
| Appears in Collections: | 2004, №1 (январь) | |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.