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https://elib.bsu.by/handle/123456789/195263Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Бумай, Юрий Александрович | - |
| dc.contributor.author | Сероглазов, Ренат Рустамович | - |
| dc.contributor.author | Скрипка, Дмитрий Алексеевич | - |
| dc.contributor.author | Лукашевич, Михаил Григорьевич | - |
| dc.date.accessioned | 2018-05-17T06:58:26Z | - |
| dc.date.available | 2018-05-17T06:58:26Z | - |
| dc.date.issued | 2004 | - |
| dc.identifier.citation | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2004. - № 3. – С. 48-53. | ru |
| dc.identifier.issn | 0321-0367 | - |
| dc.identifier.uri | http://elib.bsu.by/handle/123456789/195263 | - |
| dc.description.abstract | The size effect of transverse magnetoresistance of 2D electron gas of disordered GaAs/AlGaAs heterojunction in weak localization regime has been investigated. In the case of out-of-plane magnetic field orientation the positive Lorenz magnetoresistanse has been observed. At the same time for in-plane magnetic field orientation negative magneloresistance is due to magnetic field influence on weak localization processes. The magnetoresistance sign change at magnetic field orientation is interpreted in the frame of quantum confinement on charge carrier movement. | ru |
| dc.language.iso | ru | ru |
| dc.publisher | Минск : БГУ | ru |
| dc.rights | info:eu-repo/semantics/openAccess | en |
| dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика | ru |
| dc.title | Размерный эффект в магнитосопротивлении 2d электронного газа гетероперехода GaAs/AlGaAs | ru |
| dc.type | article | ru |
| Appears in Collections: | 2004, №3 (сентябрь) | |
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