Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/195149Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Борздов, Андрей Владимирович | - |
| dc.contributor.author | Галенчик, Вадим Освальдович | - |
| dc.date.accessioned | 2018-05-16T07:48:35Z | - |
| dc.date.available | 2018-05-16T07:48:35Z | - |
| dc.date.issued | 2004 | - |
| dc.identifier.citation | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2004. - № 2. – С. 28-31. | ru |
| dc.identifier.issn | 0321-0367 | - |
| dc.identifier.uri | http://elib.bsu.by/handle/123456789/195149 | - |
| dc.description.abstract | The influence of aluminium content x in AlxGai1-xAs layer on electron energy levels and thei populations in AlxGai1-xAs/GaAs heterostructure quantum well at temperatures T = 77 and 300 Ki examined. The system of the Schrödinger and Poisson equations is solved self-consistently takin into account the dependence of electrophysical properties of AlxGai1-xAs layer on aluminium content X. | ru |
| dc.language.iso | ru | ru |
| dc.publisher | Минск : БГУ | ru |
| dc.rights | info:eu-repo/semantics/openAccess | en |
| dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика | ru |
| dc.title | Самосогласованный расчет уровней энергии и их заселенностей в квантовой яме селективно-легированной гетероструктуры AlxGai1-xAs/GaAs | ru |
| dc.type | article | ru |
| Appears in Collections: | 2004, №2 (май) | |
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