Влияние микропузырей в подложке кремния на эпитаксиальный рост SiGe-сплавов

Abstract

The effect of hydrogen induced micro-cavities in Si substrate on heteroepitaxial growth of Sio1KisGeais alloy is investigated by ТЕМ. The micro cavities in Si substrate were formed by hydrogen implantation followed by thermal treatment. It is found that the strain relaxation in SiGe/Si layers is more enhanced in the case of growth at void-containing substrates. A good share of threading arms runs into the substrate and in this way the reduction of threading dislocations in the surface layer can be explained.