Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/194975Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Шаршунов, Д. В. | - |
| dc.date.accessioned | 2018-05-14T11:21:51Z | - |
| dc.date.available | 2018-05-14T11:21:51Z | - |
| dc.date.issued | 2000 | - |
| dc.identifier.citation | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2000. - № 1. – С. 8-10. | ru |
| dc.identifier.issn | 0321-0367 | - |
| dc.identifier.uri | http://elib.bsu.by/handle/123456789/194975 | - |
| dc.description.abstract | Generation of electron-hole pairs in group IV semiconductors under irradiation by electron beam is distinguished. Values of this process cross sections for diamond, silicon and germanium are obtained and analyzed in energy range 100 eV — I MeV, algorithm of this calculation is described. | ru |
| dc.language.iso | ru | ru |
| dc.publisher | Минск : Універсітэцкае | ru |
| dc.rights | info:eu-repo/semantics/openAccess | en |
| dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика | ru |
| dc.title | Генерация электрон-дырочных пар в полупроводниках IV группы при электронном возбуждении | ru |
| dc.type | article | ru |
| Appears in Collections: | 2000, №1 (январь) | |
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