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| Предварительный просмотр | Дата выпуска | Заглавие | Автор(ы) |
| 2015 | Fabrication and characterization of transparent tin dioxide films with variable stoichiometric composition | Ksenevich, V. K.; Adamchuk, D. V.; Odzhaev, V. B.; Zukowski, P. |
| 2019 | Features of the 1640 cm−1 band in the Raman spectra of radiation-damaged and nano-sized diamonds | Khomich, A. A.; Averin, A. A.; Poklonskaya, O. N.; Bokova-Sirosh, S. N.; Dzeraviaha, A. N.; Khmelnitsky, R. A.; Vlasov, I. I.; Shenderova, O.; Poklonski, N. A.; Khomich, A. V. |
| 2017 | First-principles study of the structural and electronic properties of graphene/MoS2 interfaces | Hieu, N. N.; Phuc, H. V.; Ilyasov, V. V.; Chien, N. D.; Poklonski, N. A.; Hieu, N. V.; Nguyen, C. V. |
| 2017 | First-principles study of the structural and electronic properties of graphene/MoS2 interfaces | Hieu, N. N.; Phuc, H. V.; Ilyasov, V. V.; Chien, N. D.; Poklonski, N. A.; Van Hieu, N.; Nguyen, C. V. |
| 2019 | Frequency and density dependencies of the electromagnetic parameters of carbon nanotube and graphene nanoplatelet based composites in the microwave and terahertz ranges | Shuba, M. V.; Yuko, D. I.; Gorokhov, G.; Meisak, D.; Bychanok, D. S.; Kuzhir, P. P.; Maksimenko, S. A.; Angelova, P.; Ivanov, E.; Kotsilkova, R. |
| 2021 | Frustrated Total Internal Reflection Spectra of Diazoquinone–Novolac Photoresist Films | Brinkevich, S. D.; Brinkevich, D. I.; Prosolovich, V. S.; Lastovskii, S. B.; Pyatlitski, A. N. |
| 2020 | Graphene membrane-based NEMS for study of interface interaction | Siahlo, A. I.; Popov, A. M.; Poklonski, N. A.; Lozovik, Yu. E.; Vyrko, S. A. |
| 2022 | High-frequency capacitor with working substance “insulator–undoped silicon–insulator” | Poklonski, N. A.; Anikeev, I. I.; Vyrko, S. A. |
| 2023 | Impedance of defective silicon layers formed in Al/SiO2/n-Si structures by irradiation with high-energy helium ions | Gorbachuk, N. I.; Poklonski, N. A.; Yermakova, K. A.; Shpakovski, S. V. |
| 2023 | Inductive type impedance of Mo/n-Si barrier structures irradiated with alpha particles | Poklonski, N. A.; Kovalev, A. I.; Usenko, K. V.; Ermakova, E. A.; Gorbachuk, N. I.; Lastovski, S. B. |
| 2015 | Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes | Poklonski, N. A.; Gorbachuk, N. I.; Nha, V. Q.; Shpakovski, S. V.; Filipenya, V. A.; Skuratov, V. A.; Kotunowicz, T. N.; Kukharchyk, N.; Becker, H.-W.; Wieck, A. |
| 2012 | Interaction of a graphene sheet with a ferromagnetic metal plate | Phan, A. D.; Viet, N. A.; Poklonski, N. A.; Woods, L. M.; Le, C. H. |
| 2023 | Interlayer interaction, shear vibrational mode, and tribological properties of two-dimensional bilayers with a commensurate moiré pattern | Minkin, A. S.; Lebedeva, I. V.; Popov, A. M.; Vyrko, S. A.; Poklonski, N. A.; Lozovik, Yu. E. |
| 2022 | Ion Implantation in Diazoquinone–Novolac Photoresist | Brinkevich, D. I.; Brinkevich, S. D.; Prosolovich, V. S. |
| 2016 | Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond | Poklonski, N. A.; Vyrko, S. A.; Poklonskaya, O. N.; Kovalev, A. I.; Zabrodskii, A. G. |
| 2023 | Lattice model of nonphonon donor–acceptor photoluminescence in germanium crystals | Poklonski, N. A.; Anikeev, I. I.; Vyrko, S. A. |
| 2021 | Low-frequency admittance of capacitor with working substance “insulator–partially disordered semiconductor–insulator” | Poklonski, N. A.; Anikeev, I. I.; Vyrko, S. A. |
| 2021 | Luminescence of brown CVD diamond: 468 nm luminescence center | Zaitsev, A. M.; Kazuchits, N. M.; Moe, K. S.; Butler, J. E.; Korolik, O. V.; Rusetsky, M. S.; Kazuchits, V. N. |
| 2022 | Luminescence of negatively charged single vacancies in diamond: ND1 center | Kazuchits, N. M.; Kazuchits, V. N.; Rusetsky, M. S.; Mazanik, A. V.; Skuratov, V. A.; Moe, K. S.; Zaitsev, A. M. |
| 2019 | Luminescent and Radiation Characteristics of Monocrystalline Diamond Powders | Lysenko, O. G.; Grushko, V. I.; Mitskevich, E. I.; Ilnitska, G. D.; Boyarintsev, A. Yu.; Onufriev, Yu. D.; Popov, V. F.; Levchuk, L. G.; Kazuchits, N. M.; Rusetsky, M. S.; Lysakovskyi, V. V.; Ivakhnenko, S. A. |
