Определение параметров отжига радиационных дефектов в монокристаллах n-Ge, облученных быстрыми электронами

Abstract

Исследован изотермический отжиг монокристаллов n-Ge, облученных быстрыми электронами. Полученные эффекты отжига объясняются ростом концентрации А-центров за счет генерации вакансий, которые образуются при отжиге ядер разупорядочных областей. На основе экспериментальных измерений и предложенной математической модели кинетики отжига рассчитана энергия активации и частотный фактор дефектов, вводимых при электронном облучении, для монокристаллов n-Ge = The isothermal annealing of n-Ge single crystals, irradiated by the fast electrons, was studied. The isothermal annealing of n-Ge single crystals irradiated with fast electrons was studied. Based on the obtained temperature dependences of the Hall constant, with decisions of electroneutrality equationsolutions, concentration of radiation defects, which belong A-centers, in irradiated single crystals n-Ge before and after annealing has been calculated. The given effects of the annealing are explained by the increasing concentration of A-centers owing to the generation of vacancies, which are formed at the annealing of kernels of regions disordering. Based on the experimental measurements and the proposed mathematical model of annealing kinetics, the activation energy and the frequency factor of the defects, introduced at the electron irradiation, for n-Ge single crystals are calculated