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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/170219
Title: Ion-Beam Formation and Track Modification of InAs Nanoclusters in Silicon and Silica
Authors: Komarov, F. F.
Milchanin, O. V.
Skuratov, V. A.
Makhavikou, M. A.
van Vuuren, A. Janse
Neethling, J. N.
Wendler, E.
Vlasukova, L. A.
Parkhomenko, I. N.
Yuvchenko, V. N.
Issue Date: 2016
Publisher: Allerton Press, Inc.
Citation: Bulletin of the Russian Academy of Sciences: Physics. - 2016. - Vol. 80, No. 2. - Pp. 141-145.
Abstract: The implantation formation of InAs nanoclusters in silicon and silica and their modification via irradiation with Xe ions with an energy of 167 MeV and a fluence of 3 × 1014 cm–2 are studied. It is found that post-implantation annealing and irradiation with high-energy ions alter the size and shape of nanoclusters and cause structural transformations within them. The ordering of nanoclusters and their elongation along the trajectory of Xe ions in a SiO2 matrix is observed
URI: http://elib.bsu.by/handle/123456789/170219
ISSN: 1062-8738; 1934-9432 (online)
Appears in Collections:Статьи сотрудников НИИ ПФП

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