Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/170219
Title: | Ion-Beam Formation and Track Modification of InAs Nanoclusters in Silicon and Silica |
Authors: | Komarov, F. F. Milchanin, O. V. Skuratov, V. A. Makhavikou, M. A. van Vuuren, A. Janse Neethling, J. N. Wendler, E. Vlasukova, L. A. Parkhomenko, I. N. Yuvchenko, V. N. |
Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
Issue Date: | 2016 |
Publisher: | Allerton Press, Inc. |
Citation: | Bulletin of the Russian Academy of Sciences: Physics. - 2016. - Vol. 80, No. 2. - Pp. 141-145. |
Abstract: | The implantation formation of InAs nanoclusters in silicon and silica and their modification via irradiation with Xe ions with an energy of 167 MeV and a fluence of 3 × 1014 cm–2 are studied. It is found that post-implantation annealing and irradiation with high-energy ions alter the size and shape of nanoclusters and cause structural transformations within them. The ordering of nanoclusters and their elongation along the trajectory of Xe ions in a SiO2 matrix is observed |
URI: | http://elib.bsu.by/handle/123456789/170219 |
ISSN: | 1062-8738; 1934-9432 (online) |
Appears in Collections: | Статьи сотрудников НИИ ПФП |
Files in This Item:
File | Description | Size | Format | |
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141-145.PDF | 1,2 MB | Adobe PDF | View/Open |
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