Tunable photoluminescence spectra of doped semiconductor superlattices

Abstract

Taking into account the density state tails appearing due to fluctuations of impurity concentrations, the spontaneous emission spectra of doped semiconductor superlattices are calculated. In the framework of the model developed, the explanation of the experimentally observed longwave edge and the shift of the photoluminescence spectra with increase in the excitation level and temperature is given. The role of the defects formed on α-irradiation is discussed, and the lifetime of current carriers is evaluated depending on the design parameters and excitation conditions of the GaAs doped superlattices.