Auger Recombination Processes and Threshold Conditions in Asymmetric-Multiple-Quantum-Well Heterostructure Lasers

Abstract

Different possible processes of non-radiative Auger recombination which occur in the active region of quantum-well lasers are analyzed and the temperature dependence of the lasing threshold in the GaInAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (4 and 9 nm) is determined. Activated behavior of the Auger recombination is mentioned and respective effective parameters of the processes are calculated. For described asymmetric quantum-well heterostructure lasers, it is shown that the influence of the Auger recombination processes on the temperature behavior of the lasing threshold is not essential until the temperature of the active region is lower than 360 K and the cavity losses do not exceed 80 cm-1