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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/12590
Title: Photoluminescence of the GaAs Superlattices with Quasi-Delta-Doped Layers
Authors: Zvonkov, V. N.
Aleshkin, V. Ya.
Gavrilenko, V. I.
Kononenko, V. K.
Kunert, H. W.
Morozov, S. V.
Ushakov, D. V.
Issue Date: 2009
Publisher: Bentham Open
Citation: The Open Optics Journal. - 2009. - № 3. - P. 70-73
Abstract: The GaAs short-period superlattices have been grown for the first time by the metal-organic hydride epitaxy method using Se and C for quasi-\delta-doping. Photoluminescence spectra measured at 4.2 K display well-distinguished peaks, which coincide with transitions between quantizied levels of electrons and holes in the potential relief quantum wells. To describe observed phenomena in quasi-\delta-doped superlattices a theory is developed with taking into account existing tails of the density of states.
URI: http://elib.bsu.by/handle/123456789/12590
Appears in Collections:Статьи факультета радиофизики и компьютерных технологий

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