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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/125561
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dc.contributor.authorFedotova, J. A.-
dc.contributor.authorIvanov, D. K.-
dc.contributor.authorMazanik, A. V.-
dc.contributor.authorSvito, I. A.-
dc.contributor.authorStreltsov, E. A.-
dc.contributor.authorSaad, A. M.-
dc.contributor.authorZukowski, P. V.-
dc.contributor.authorFedotov, A. K.-
dc.contributor.authorBury, P.-
dc.contributor.authorApel, P. Yu.-
dc.date.accessioned2015-12-24T14:50:01Z-
dc.date.available2015-12-24T14:50:01Z-
dc.date.issued2015-11-
dc.identifier.citationActa Physica Polonica A. - 2015. - Vol. 128, № 5. - P. 894 - 896ru
dc.identifier.urihttp://elib.bsu.by/handle/123456789/125561-
dc.description.abstractIn this work anisotropic magnetoresistance in nanogranular Ni lms and Ni nanorods on Si(100) wafer substrates was studied in wide ranges of temperature and magnetic feld. To produce Ni films and nanorods we used electrochemical deposition of Ni clusters either directly on the Si substrate or into pores in SiO2 layer on the Si substrate. Pores, randomly distributed in the template have diameters of 100-250 nm and heights about 400-500 nm. Comparison of temperature dependences of resistance and magnetoresistance in Ni films and n-Si/SiO2/Ni structures with Ni nanorods showed that they are strongly dependent on orientation of magnetic field and current vectors relative to each other and the plane of Si substrate. Moreover, magnetoresistance values in n-Si/SiO2/Ni nanostructures can be controlled not only by electric field applied along Si substrate but also by additionally applied transversal bias voltage.ru
dc.language.isoenru
dc.publisherPolish Academy of Sciences, Institute of Physicsru
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физикаru
dc.titleAnisotropic magnetoresistance of Ni nanorod arrays in porous SiO2/Si templates manufactured by swift heavy ion-induced modificationru
dc.typeArticleru
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