Lattice tilt, concentration, and relaxation degree of partly relaxed InGaAs/GaAs structures

Abstract

The series of samples is investigated to verify the validity of the scattering theory within the layers of different relaxation degree. The samples composed of In0.06Ga0.94As layer of different thicknesses on GaAs [001] substrates were grown using MBE technique. The symmetric and asymmetric reciprocal space maps (RSM) were measured and simulated for the samples with the fully coherent layer, in the vicinity of the critical thickness of relaxation, and with the fully relaxed layer. The crystallographic layer miscuts, indium concentrations, the relaxation degrees, and density of dislocations have been precisely evaluated