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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/10479
Title: Monte Carlo study of influence of channel length and depth on electron transport in SOI MOSFETs
Authors: Zhevnyak, Oleg
Borzdov, V. M.
Borzdov, Andrey
Pozdnyakov, Dmitry
Komarov, F. F.
Issue Date: 2007
Publisher: SPIE
Citation: Micro- and Nanoelectronics 2007. Proceedings of the SPIE. 1–5 October 2007, Zvenigorod, Russia. - 2008. - Volume 7025, article id. 70251L, 8 pp.
Abstract: The Monte Carlo model of electron transport in SOI MOSFETs is proposed. Both 2D and 3D conditions are considered. The Poisson equation and boundary conditions are presented for every case. Fully depleted SOI MOSFETs and partially depleted SOI MOSFETs are contradistinguished. The values of electron current as well as drift velocity in different parts of SOI MOSFETs channel are calculated by means of the Monte Carlo simulation. The SOI MOSFETs with the channel length equal to 0.5, 0.25 and 0.1 m as well as the channel depth equal to 10, 20, 100, 200, 1000 nm are studied. Drift velocity as a function of the channel depth is obtained. It is shown that the function has a peak at the channel depth equal to 20 nm.
URI: http://elib.bsu.by/handle/123456789/10479
Appears in Collections:Статьи факультета радиофизики и компьютерных технологий

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