Моделирование методом Монте-Карло подвижности электронов вблизи стока в короткоканальных МОП-транзисторах с мелкими и глубокими стоками

Abstract

In this paper Monte Carlo calculations of electron mobility in MOSFETs with 0.5, 0.25 and 0.1 m channel length as well as different values of drain depth are considered. The dependencies of electron mobility on drain depth in different section of device substrate are obtained. Results of simulation demonstrate extremum behavior from the changing of drain depth. That may be explained by the redistribution of electric field near the drain region.