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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/10018
Title: Features of the Pulsed Treatment of Silicon Layers Implanted with Erbium Ions
Authors: Batalov, R. I.
Bayazitov, R. M.
Nurutdinov, R. M.
Kryzhkov, D. I.
Gaiduk, P. I.
Marques, C. P.
Alves, E.
Issue Date: 2009
Publisher: Pleiades Publishing, Ltd.
Citation: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. Vol. 3. - 2009. - No. 4. - pp. 604–607.
Abstract: Abstract—The formation of thin-film solid solutions of erbium in silicon and synthesis of erbium silicides were performed using continuous implantation of silicon with erbium ions followed by pulsed ion-beam treat- ment. Structural and optical properties of formed Si:Er layers were studied by Rutherford backscattering, trans- mission electron microscopy, and low-temperature photoluminescence. The dependences of erbium redistribu- tion, the microstructure of Si:Er layers, and their photoluminescence in the near-IR region on the erbium con- centration and pulsed treatment conditions were determined.
URI: http://elib.bsu.by/handle/123456789/10018
Appears in Collections:Статьи факультета радиофизики и компьютерных технологий

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