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|Title:||Features of the Pulsed Treatment of Silicon Layers Implanted with Erbium Ions|
|Authors:||Batalov, R. I.|
Bayazitov, R. M.
Nurutdinov, R. M.
Kryzhkov, D. I.
Gaiduk, P. I.
Marques, C. P.
|Keywords:||ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика|
|Publisher:||Pleiades Publishing, Ltd.|
|Citation:||Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. Vol. 3. - 2009. - No. 4. - pp. 604–607.|
|Abstract:||Abstract—The formation of thin-ﬁlm solid solutions of erbium in silicon and synthesis of erbium silicides were performed using continuous implantation of silicon with erbium ions followed by pulsed ion-beam treat- ment. Structural and optical properties of formed Si:Er layers were studied by Rutherford backscattering, trans- mission electron microscopy, and low-temperature photoluminescence. The dependences of erbium redistribu- tion, the microstructure of Si:Er layers, and their photoluminescence in the near-IR region on the erbium con- centration and pulsed treatment conditions were determined.|
|Appears in Collections:||Статьи факультета радиофизики и компьютерных технологий|
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