Logo BSU

Просмотр Авторы Poklonski, N. A.

Перейти: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

А Б В Г Д Е Ж З И Й К Л М Н О П Р С Т У Ф Х Ц Ч Ш Щ Ъ Ы Ь Э Ю Я

или введите несколько первых символов:  
Результаты 17 - 36 из 63 < предыдущий   следующий >
Предварительный просмотрДата выпускаЗаглавиеАвтор(ы)
2019Features of the 1640 cm−1 band in the Raman spectra of radiation-damaged and nano-sized diamondsKhomich, A. A.; Averin, A. A.; Poklonskaya, O. N.; Bokova-Sirosh, S. N.; Dzeraviaha, A. N.; Khmelnitsky, R. A.; Vlasov, I. I.; Shenderova, O.; Poklonski, N. A.; Khomich, A. V.
2017First-principles study of the structural and electronic properties of graphene/MoS2 interfacesHieu, N. N.; Phuc, H. V.; Ilyasov, V. V.; Chien, N. D.; Poklonski, N. A.; Hieu, N. V.; Nguyen, C. V.
2017First-principles study of the structural and electronic properties of graphene/MoS2 interfacesHieu, N. N.; Phuc, H. V.; Ilyasov, V. V.; Chien, N. D.; Poklonski, N. A.; Van Hieu, N.; Nguyen, C. V.
2020Graphene membrane-based NEMS for study of interface interactionSiahlo, A. I.; Popov, A. M.; Poklonski, N. A.; Lozovik, Yu. E.; Vyrko, S. A.
2022High-frequency capacitor with working substance “insulator–undoped silicon–insulator”Poklonski, N. A.; Anikeev, I. I.; Vyrko, S. A.
2023Impedance of defective silicon layers formed in Al/SiO2/n-Si structures by irradiation with high-energy helium ionsGorbachuk, N. I.; Poklonski, N. A.; Yermakova, K. A.; Shpakovski, S. V.
2023Inductive type impedance of Mo/n-Si barrier structures irradiated with alpha particlesPoklonski, N. A.; Kovalev, A. I.; Usenko, K. V.; Ermakova, E. A.; Gorbachuk, N. I.; Lastovski, S. B.
2015Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon DiodesPoklonski, N. A.; Gorbachuk, N. I.; Nha, V. Q.; Shpakovski, S. V.; Filipenya, V. A.; Skuratov, V. A.; Kotunowicz, T. N.; Kukharchyk, N.; Becker, H.-W.; Wieck, A.
2012Interaction of a graphene sheet with a ferromagnetic metal platePhan, A. D.; Viet, N. A.; Poklonski, N. A.; Woods, L. M.; Le, C. H.
2023Interlayer interaction, shear vibrational mode, and tribological properties of two-dimensional bilayers with a commensurate moiré patternMinkin, A. S.; Lebedeva, I. V.; Popov, A. M.; Vyrko, S. A.; Poklonski, N. A.; Lozovik, Yu. E.
2016Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamondPoklonski, N. A.; Vyrko, S. A.; Poklonskaya, O. N.; Kovalev, A. I.; Zabrodskii, A. G.
2023Lattice model of nonphonon donor–acceptor photoluminescence in germanium crystalsPoklonski, N. A.; Anikeev, I. I.; Vyrko, S. A.
2020Linear magnetoresistance in graphene formed on silicon carbide: two dimensional magnetotransportPoklonski, N. A.; Samuilov, V. A.
2021Low-frequency admittance of capacitor with working substance “insulator–partially disordered semiconductor–insulator”Poklonski, N. A.; Anikeev, I. I.; Vyrko, S. A.
2023Magnetic and optical properties of natural diamonds with subcritical radiation damage induced by fast neutronsPoklonski, N. A.; Khomich, A. A.; Svito, I. A.; Vyrko, S. A.; Poklonskaya, O. N.; Kovalev, A. I.; Kozlova, M. V.; Khmelnitskii, R. A.; Khomich, A. V.
7-апр-2010Magnetically operated nanorelay based on two single-walled carbon nanotubes filled with endofullerenes Fe@C20Poklonski, N. A.; Kislyakov, E. F.; Vyrko, S. A.; Hieu, N. N.; Bubel, O. N.; Siahlo, A. I.; Lebedeva, I. V.; Knizhnik, A. A.; Popov, A. M.; Lozovik, Y. E.
7-мая-2020Magneto-optical absorption in silicene and germanene induced by electric and Zeeman fieldsMuoi, D.; Hieu, N. N.; Nguyen, C. V.; Hoi, B. D.; Nguyen, H. V.; Hien, N. D.; Poklonski, N. A.; Kubakaddi, S. S.; Phuc, H. V.
2019Magneto-optical transport properties of monolayer MoS2 on polar substratesNguyen, C. V.; Hieu, N. N.; Poklonski, N. A.; Ilyasov, V. V.; Dinh, L.; Phong, T. C.; Tung, L. V.; Phuc, H. V.
2017Magneto-optical transport properties of monolayer MoS2 on polar substratesNguyen, C. V.; Hieu, N. N.; Poklonski, N. A.; Ilyasov, V. V.; Dinh, L.; Phong, T. C.; Tung, L. V.; Phuc, H. V.
2023Model of DC tunneling conductivity via hydrogen-like impurities in heavily doped compensated semiconductorsPoklonski, N. A.; Anikeev, I. I.; Vyrko, S. A.; Zabrodskii, A. G.