Logo BSU

Просмотр Авторы Zabrodskii, A. G.

Перейти: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

А Б В Г Д Е Ж З И Й К Л М Н О П Р С Т У Ф Х Ц Ч Ш Щ Ъ Ы Ь Э Ю Я

или введите несколько первых символов:  
Результаты 1 - 9 из 9
Предварительный просмотрДата выпускаЗаглавиеАвтор(ы)
2024Activation Energy of DC Hopping Conductivity of Lightly Doped Weakly Compensated Crystalline SemiconductorsPoklonski, N. A.; Anikeev, I. I.; Vyrko, S. A.; Zabrodskii, A. G.
2025Activation energy of DC hopping conductivity of lightly doped weakly compensated crystalline semiconductorsPoklonski, N. A.; Anikeev, I. I.; Vyrko, S. A.; Zabrodskii, A. G.
2024Calculation of the Activation Energy of Electrical ε2-Conductivity of Weakly Compensated SemiconductorsPoklonski, Nikolai A.; Anikeev, Ilya I.; Vyrko, S. A.; Zabrodskii, A. G.
2025Calculation of the activation energy of electrical ε2-conductivity of weakly compensated semiconductorsPoklonski, N. A.; Anikeev, I. I.; Vyrko, S. A.; Zabrodskii, A. G.
2025Clustering effects of spin radicals on superparamagnetism: calculation for diamond with radiation-induced defectsPoklonski, N. A.; Vyrko, S. A.; Zabrodskii, A. G.
2021Curie–Weiss behavior of the low-temperature paramagnetic susceptibility of semiconductors doped and compensated with hydrogen-like impuritiesPoklonski, N. A.; Dzeraviaha, A. N.; Vyrko, S. A.; Zabrodskii, A. G.; Veinger, A. I.; Semenikhin, P. V.
2016Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamondPoklonski, N. A.; Vyrko, S. A.; Poklonskaya, O. N.; Kovalev, A. I.; Zabrodskii, A. G.
2023Model of DC tunneling conductivity via hydrogen-like impurities in heavily doped compensated semiconductorsPoklonski, N. A.; Anikeev, I. I.; Vyrko, S. A.; Zabrodskii, A. G.
2011Transition temperature from band to hopping direct current conduction in crystalline semiconductors with hydrogen-like impurities: Heat versus Coulomb attractionPoklonski, N. A.; Vyrko, S. A.; Poklonskaya, O. N.; Zabrodskii, A. G.