Просмотр Авторы Anikeev, I. I.
Результаты 1 - 6 из 6
Предварительный просмотр | Дата выпуска | Заглавие | Автор(ы) |
| 2023 | DC hopping photoconductivity via three-charge-state point defects in partially disordered semiconductors | Poklonski, N. A.; Anikeev, I. I.; Vyrko, S. A. |
| 2021 | Design of Peltier element based on semiconductors with hopping electron transfer via defects | Poklonski, N. A.; Vyrko, S. A.; Kovalev, A. I.; Anikeev, I. I.; Gorbachuk, N. I. |
| 2022 | High-frequency capacitor with working substance “insulator–undoped silicon–insulator” | Poklonski, N. A.; Anikeev, I. I.; Vyrko, S. A. |
| 2023 | Lattice model of nonphonon donor–acceptor photoluminescence in germanium crystals | Poklonski, N. A.; Anikeev, I. I.; Vyrko, S. A. |
| 2021 | Low-frequency admittance of capacitor with working substance “insulator–partially disordered semiconductor–insulator” | Poklonski, N. A.; Anikeev, I. I.; Vyrko, S. A. |
| 2023 | Model of DC tunneling conductivity via hydrogen-like impurities in heavily doped compensated semiconductors | Poklonski, N. A.; Anikeev, I. I.; Vyrko, S. A.; Zabrodskii, A. G. |