Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на этот документ:
https://elib.bsu.by/handle/123456789/288230
Заглавие документа: | Study of radiation-induced defects in p-type si1−x gex diodes before and after annealing |
Авторы: | Ceponis, Tomas Lastovskii, Stanislau Makarenko, Leonid Pavlov, Jevgenij Pukas, Kornelijus Gaubas, Eugenijus |
Тема: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Математика |
Дата публикации: | 2016 |
Издатель: | MDPI AG |
Библиографическое описание источника: | Mater 2020;13(24):1-10. |
Аннотация: | In this work, electrically active defects of pristine and 5.5 MeV electron irradiated p-type silicon–germanium (Si1−x Gex )-based diodes were examined by combining regular capacitance deep-level transient spectroscopy (C-DLTS) and Laplace DLTS (L-DLTS) techniques. The p-type SiGe alloys with slightly different Ge contents were examined. It was deduced from C-DLTS and L-DLTS spectra that the carbon/oxygen-associated complexes prevailed in the pristine Si0.949 Ge0.051 alloys. Irradiation with 5.5 MeV electrons led to a considerable change in the DLT spectrum containing up to seven spectral peaks due to the introduction of radiation defects. These defects were identified using activation energy values reported in the literature. The double interstitial and oxygen complexes and the vacancy, di-vacancy and tri-vacancy ascribed traps were revealed in the irradiated samples. The interstitial carbon and the metastable as well as stable forms of carbon–oxygen (Ci Oi* and Ci Oi ) complexes were also identified for the electron-irradiated SiGe alloys. It was found that the unstable form of the carbon–oxygen complex became a stable complex in the irradiated and the subsequently annealed (at 125◦ C) SiGe samples. The activation energy shifts in the radiation-induced deep traps to lower values were defined when increasing Ge content in the SiGe alloy. |
URI документа: | https://elib.bsu.by/handle/123456789/288230 |
DOI документа: | 10.3390/ma13245684 |
Scopus идентификатор документа: | 85097656008 |
Финансовая поддержка: | Lietuvos Mokslo Taryba |
Лицензия: | info:eu-repo/semantics/openAccess |
Располагается в коллекциях: | Статьи факультета прикладной математики и информатики |
Полный текст документа:
Файл | Описание | Размер | Формат | |
---|---|---|---|---|
materials_13_05684_pdf.pdf | 1,9 MB | Adobe PDF | Открыть |
Все документы в Электронной библиотеке защищены авторским правом, все права сохранены.