Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на этот документ:
https://elib.bsu.by/handle/123456789/27437
Полная запись метаданных
Поле DC | Значение | Язык |
---|---|---|
dc.contributor.author | Tivanov, M. S. | - |
dc.contributor.author | Trofimov, Yu. V. | - |
dc.contributor.author | Survilo, L. N. | - |
dc.contributor.author | Ostretsov, E. F. | - |
dc.date.accessioned | 2012-12-17T15:45:24Z | - |
dc.date.available | 2012-12-17T15:45:24Z | - |
dc.date.issued | 2012-09 | - |
dc.identifier.citation | Lithuanian Journal of Physics, V.52, N.3 (2012) 219–223 | ru |
dc.identifier.uri | http://elib.bsu.by/handle/123456789/27437 | - |
dc.description.abstract | The thermal activation process of CdSexS1-x films, formed by screen printing, was investigated. We mostly focused on the influence of thermal treatment conditions on oxidised film formation on the crystalline grain surface with nano-barrier “dielectric-semiconductor” layer generation. The composition and thickness of nano-barrier layers were determined by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) methods. The thickness of nano-barrier layers was found to be 2–5 monolayers. It was shown that photoelectric properties of CdSexS1-x films were determined by the doping level and nano-barrier layer characteristics. By the use of XRD and SEM methods we experimentally investigated and justified that better microstructure and photoelectric properties (RD / RL ≥ 107) of CdSexS1-x films are achieved by photosensitivity activation during 15–30 min thermal treatment in quasi-closed air atmosphere at 550 °С or during 5–15 min at 600 °С with low speed cooling (3 °С/min). The manufacturing method for obtaining CdSexS1-x films with assigned characteristics determined by paste composition and properties, thermal treatment regime and medium optimisation was developed. | ru |
dc.language.iso | en | ru |
dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика | ru |
dc.title | Physicochemichal Features of Dielectrical Nano-Barrirer Layers in CdSexS1-x Films Formed by Screen Printing Method | ru |
dc.type | article | ru |
Располагается в коллекциях: | Архив статей |
Полный текст документа:
Файл | Описание | Размер | Формат | |
---|---|---|---|---|
Physicochemichal Features of Dielectrical Nano-Barrirer Layers in CdSexS1-x Films Formed by Screen Printing Method.pdf | 1,87 MB | Adobe PDF | Открыть |
Все документы в Электронной библиотеке защищены авторским правом, все права сохранены.