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Please use this identifier to cite or link to this item: http://elib.bsu.by/handle/123456789/239790
Title: Annealing and plasma treatment effect on structural, morphological and topographical properties of evaporated β-In2S3 films
Authors: Tivanov, M. S.
Gremenok, V. F.
Zimin, S. P.
Pipkova, A. S.
Mazaletskiy, L. A.
Amirov, I. I.
Ramakrishna Reddy, K. T.
Saritha, K.
Rasool, S.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ
ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 20-Jan-2020
Publisher: IOP Publishing Ltd.
Citation: Materials Research Express – 2020. – Volume 7, Number 1 – Pages 016431
Abstract: Indium sulfide (In2S3)is a wide bandgap semiconductor, which is widely used as a window/buffer layer in thin film solar cell applications. In2S3 thin films were deposited using thermal evaporation technique and were annealed in sulfur ambient at 200 °C and 250 °C. Further, these films were treated in inductively coupled argon plasma sputtering with an average argon ion energy of 75 eV for 30 s. The paper presents the effect of Ar-plasma treatment on structure, elemental composition, morphology and topography of In2S3 films and the results were reported. Further, the optimized In2S3 layers were continued for plasma etching process with an average argon ion energy of 25 eV to study the effect of plasma etching duration on the growth of metallic indium nanoparticles over the film surface and the results were discussed in detail.
URI: http://elib.bsu.by/handle/123456789/239790
DOI: https://doi.org/10.1088/2053-1591/ab6a5b
Appears in Collections:Кафедра энергофизики

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