Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/20687
Title: | Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis |
Authors: | Komarov, F. Vlasukova, L. Milchanin, O. Mudryi, A. Dunetz, B. S. Wesch, W. Wendler, E. Karwat, C. |
Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
Issue Date: | 2011 |
Citation: | Acta physica polonica A. - 2011. - № 1. - С. 87-90. |
Abstract: | We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence “hot” implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/ transmission electron di˙raction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900 ±C up to 20–90 nm in those annealed at 1100 ±C. For the samples annealed at 900 ±C a broad band in the region of 0.75–1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed. |
URI: | http://elib.bsu.by/handle/123456789/20687 |
Appears in Collections: | Статьи сотрудников НИИ ПФП |
Files in This Item:
File | Description | Size | Format | |
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Structure and Optical Properties of Silicon Layers with GaSb.pdf | 843,91 kB | Adobe PDF | View/Open |
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